triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 1 ka-band 2w power amplifier tga4516-ts key features ? 30 - 40 ghz bandwidth ? > 33 dbm nominal psat @ pin = 20dbm ? 18 db nominal gain ? bias: 6 v, 1050 ma idq (1.9a under rf drive) ? 0.15 um 3mi mmw phemt technology ? thermal spreader dimensions: 2.921 x 2.438 mm primary applications ? military radar systems ? ka-band sat-com ? point to point radio fixtured data v d = 6v, i d = 1050ma -25 -20 -15 -10 -5 0 5 10 15 20 25 30 32 34 36 38 40 frequency (ghz) s-parameters (db) s21 s22 s11 pout @ pin =20dbm 30 31 32 33 34 35 30 32 34 36 38 40 frequency (ghz) pout (dbm) product description the triquint tga4516 is a high power mmic amplifier for ka-band applications. the part is designed using triquint?s 0.15um power phemt process and is soldered to a cumo thermal spreader. the small chip size is achieved by utilizing triquint?s 3 metal layer interconnect (3mi) design technology that allows compaction of the design over competing products. the tga4516 provides >33 dbm saturated output power, and has typical gain of 18 db at a bias of 6v and 1050ma (idq). the current rises to 1.9a under rf drive. this hpa is ideally suited fo r many applications such as military radar systems, ka -band sat-com, and point- to-point radios. the tga4516 is 100% dc and rf tested on-wafer to ensure performance compliance . lead-free & rohs compliant. datasheet subject to change without notice.
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 2 symbol parameter value notes v + positive supply voltage 6.5 v 2/ v - negative supply voltage range -5 to 0 v i + positive supply current 3 a 2 / 3 / ? i g ? gate supply current 85 ma 3 / p in input continuous wave power 24 dbm p d power dissipation 12.7 w 2 / t ch operating channel temperature 200 o c 4 / t m mounting temperature (30 seconds) 320 o c t stg storage temperature -65 to 150 o c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / total current for the entire mmic. 4 / junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. tga4516-ts table i maximum ratings 1 /
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 3 table ii electrical characteristics (ta = 25 c, nominal) parameter typical units drain operating 6 v quiescent current 1050 ma frequency range 30 - 40 ghz small signal gain, s21 18 db input return loss, s11 10 db output return loss, s22 7 db power @ saturated, psat 33 dbm tga4516-ts
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 4 table iii thermal information 1/ see sheet 8, tga4516 on thermal spreader, note 5 parameter condition rating thermal resistance, jc , to back of thermal spreader 1/ tbase = 70 c jc = 8.3 c/w channel temperature (tch), and median lifetime (tm) tbase = 70 c, vd = 6 v, id = 1.050 a, pdiss = 6.3 w tch = 122 c tm = 2.9 e+7 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 1.9 a, pout = 33 dbm, pdiss = 9.4 w tch = 148 c tm = 1.3e+6 hours tga4516-ts
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 5 fixtured performance tga4516 pout @ pin =20dbm vds=6v, idq=1050ma 25 26 27 28 29 30 31 32 33 34 35 28 30 32 34 36 38 40 42 frequency (ghz) pout (dbm) pin=20dbm tga4516-ts vds=6v, idq=1050ma -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 28 30 32 34 36 38 40 42 frequency (ghz) s-parameters (db) s11 s22 s21
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 6 fixtured performance tga4516 pout vs. pin freq=35ghz, vds=6v, idq=1050ma 10 15 20 25 30 35 40 -10-5 0 5 10152025 pin (dbm) pout (dbm) 0 5 10 15 20 25 30 gain (db) pout large signal gain tga4516-ts tga4516 ids vs. pin freq=35ghz, vds=6v, idq=1050ma 10 15 20 25 30 35 40 -10-5 0 5 10152025 pin (dbm) pout (dbm) 1000 1200 1400 1600 1800 2000 2200 ids (ma) pout ids
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 7 mechanical drawing tga4516-ts gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. units: millimeters [inches] thickness: 0.100 [0.004] (reference only) chip edge to bond pad dimensions are shown to center of bond pad chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002] rf ground is backside of mmic bond pad #1 (rf input) 0.100 x 0.200 [0.004 x 0.008] bond pad #2 (vg2) 0.100 x 0.100 [0.004 x 0.004] bond pad #3 (vd12) 0.100 x 0.200 [0.004 x 0.008] bond pad #4 (vg3) 0.100 x 0.100 [0.004 x 0.004] bond pad #5 (vd3) 0.100 x 0.100 [0.004 x 0.004] bond pad #6 (rf output) 0.100 x 0.200 [0.004 x 0.008] bond pad #7 (vd3) 0.100 x 0.200 [0.004 x 0.008] bond pad #8 (vg3) 0.100 x 0.100 [0.004 x 0.004] bond pad #9 (vd12) 0.100 x 0.200 [0.004 x 0.008] bond pad #10 (vg2) 0.100 x 0.100 [0.004 x 0.004]
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 8 mechanical drawing tga4516 on thermal spreader tga4516-ts gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. notes: 1. dimensions are in mm [inches]. 2. dimension limits apply after plating. 3. dimension of surface roughness is in micrometer (microinch). 4. tolerances unless otherwise stat ed +0.075, -0.025 [+0.003, -0.001] 5. material: copper and molybdenum metal matrix material (amc8515) with a cte of 7.0 ppm/c. 6. plating: gold (au) 1.27-2.54 um per astm b 488, type 1, code a. over nickel (ni) 2.5-7.5 um per qq-n-290, class 1. 7. mmic is attached to thermal spreader using ausn solder
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 9 chip assembly diagram tga4516-ts gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor www.triquin t.com (972) 994-8465 fax: (972) 994-8504 info-mmw@tqs.com november 2011 ? rev c 10 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. tga4516-ts component storage, placement, and adhesive attachment assembly notes: ? devices must be stored in a dry nitrogen atmosphere. ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? attachment of the thermal spreader should use an epoxy with high thermal conductivity. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ordering information part package style tga4516-ts gaas mmic die on thermal spreader
|
